송용호 교수님
한양대학교
Recent storage systems tend to use non-volatile memory devices to enhance the IO bandwidth and responsiveness. NAND flash memory is one of the popular non-volatile memory devices used to realize such high-performance storage capability. However, no support for in-place data update has led to the introduction of various logical-to-physical address mapping and garbage collection techniques. The effectiveness of such techniques plays a crucial role in storage performance in many applications. In particular, the garbage collection running in background mode inside the storage often increases the response latency to user requests from host. In this talk, a preemptive garbage collection technique is introduced to enhance storage responsiveness with a fraction of resource overhead. The technique will be presented along with the analysis of implementation overhead as well as the impact on performance empirically observed on realistic SSD platforms.
1989 Seoul National University, Computer Engineering, BS
1991 Seoul National University, Computer Engineering, MS
2002 University of Southern California, Electrical Engineering, Ph.D.
2003- Present, Hanyang University, Dept. of Electronic Engineering (융합전자공학부), Associate Professor
문의: 민상렬 교수 (880~7047)